Samsung MV-3T4G4D/US 8 GB (2 x 4 GB) DDR3-1333 SODIMM CL9 Memory
Samsung MV-3T4G4D/US 8 GB (2 x 4 GB) DDR3-1333 SODIMM CL9 Memory
Search on Amazon
Specifications
ManufacturerSamsung
Part #MV-3T4G4D/US
SpeedDDR3-1333
Form Factor204-pin SODIMM (DDR3)
Modules2 x 4GB
ColorBlack
First Word Latency13.503 ns
CAS Latency9
Voltage1.5 V
ECC / RegisteredNon-ECC / Unbuffered
Heat SpreaderNo